RF Micro Devices Inc (RFMD) of Greensboro, NC, USA has introduced a highly-integrated front end module (FEM) for Smart Energy/Advanced Metering Infrastructure (AMI) applications at the 2013 Consumer Electronics Show (CES) in Las Vegas. The single-chip RFFM6403 FEM reduces customer design time and speeds customer time-to-market in Smart Energy/AMI applications operating in the 405MHz—475MHz frequency range, says the firm, as well as for portable battery powered equipment and general 433/470MHz ISM band systems.

RFFM6403 integrates a transmit high power path with a +30.5dBm PA and Tx harmonic output filtering, a transmit bypass thru path with Tx harmonic output filtering, and a receive path with a low noise amplifier (LNA) with bypass mode. The FEM also features a low insertion loss/high isolation SP3T switch and separate Rx/Tx 50 ohm ports, simplifying matching and providing input and output signals for both the Tx and Rx paths.

RFFM6403 is designed for AMI systems operating with high efficiency requirements and a minimum output power of 30 dBm. In the receive path, the Rx chain provides 16 dB of typical gain with only 5 mA of current and an excellent noise figure of 1.7 dB. The high level of integration and industry-leading form factor (6mm x 6mm x 1mm) minimize product footprint at the customer device while reducing external component count and associated assembly costs, says RFMD.

RFMD will showcase its broad portfolio of Smart Energy/AMI, ZigBee, and ISM band solutions from January 8 to January 11, at the 2013 Consumer Electronics Show in the ZigBee Alliance Pavilion, in South Hall 1, booth 20612, at the Las Vegas Convention Center.